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Not for new design, this product will be obsoleted soon
BFQ67 / BFQ67R / BFQ67W
Vishay Semiconductors
Silicon NPN Planar RF Transistor
1
SOT23
Features
* * * * * Small feedback capacitance Low noise figure e3 High transition frequency Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
2 1
SOT23
3
Applications
Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequencies.
3 1
2
SOT323
Mechanical Data
Typ: BFQ67 Case: SOT-23 Plastic case Weight: approx. 8.0 mg Marking: V2 Pinning: 1 = Collector, 2 = Base, 3 = Emitter Typ: BFQ67R Case: SOT-23 Plastic case Weight: approx. 8.0 mg Marking: R67 Pinning: 1 = Collector, 2 = Base, 3 = Emitter Typ: BFQ67W Case: SOT-323 Plastic case Weight: approx. 6.0 mg Marking: WV2 Pinning: 1 = Collector, 2 = Base, 3 = Emitter
2
3
19150
Electrostatic sensitive device. Observe precautions for handling.
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Tamb 60 C Test condition Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 20 10 2.5 50 200 150 - 65 to + 150 Unit V V V mA mW C C
Document Number 85022 Rev. 1.6, 08-Sep-08
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BFQ67 / BFQ67R / BFQ67W
Vishay Semiconductors Maximum Thermal Resistance
Parameter Junction ambient
1) 1)
Test condition
Symbol RthJA
Value 450
Unit K/W
on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 m Cu
Electrical DC Characteristics
Tamb = 25 C, unless otherwise specified Parameter Collector-emitter cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltage Test condition VCE = 20 V, VBE = 0 VCB = 15 V, IE = 0 VEB = 1 V, IC = 0 IC = 1 mA, IB = 0 IC = 50 mA, IB = 5 mA Symbol ICES ICBO IEBO V(BR)CEO VCEsat hFE 65 10 0.1 100 0.4 150 Min Typ. Max 100 100 1 Unit A nA A V V
DC forward current transfer ratio VCE = 5 V, IC = 15 mA
Electrical AC Characteristics
Tamb = 25 C, unless otherwise specified Parameter Transition frequency Collector-base capacitance Collector-emitter capacitance Emitter-base capacitance Noise figure Test condition VCE = 8 V, IC = 15 mA, f = 500 MHz VCB = 10 V, f = 1 MHz VCE = 8 V, f = 1 MHz VEB = 0.5 V, f = 1 MHz VCE = 8 V, ZS = ZSopt, f = 800 MHz, IC = 5 mA VCE = 8 V, ZS = ZSopt, f = 800 MHz, IC = 15 mA VCE = 8 V, ZS = 50 , f = 2 GHz, IC = 5 mA VCE = 8 V, ZS = 50 , f = 2 GHz, IC = 15 mA Power gain VCE = 8 V, ZS = 50 , ZL = ZLopt, IC = 15 mA, f = 800 MHz VCE = 8 V, ZS = 50 , ZL = ZLopt, IC = 15 mA, f = 2 GHz Linear output voltage - two tone intermodulation test Third order intercept point VCE = 8 V, IC = 15 mA, dIM = 60 dB, f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50 VCE = 8 V, IC = 15 mA, f = 800 MHz Symbol fT Ccb Cce Ceb F F F F Gpe Gpe V1 = V2 Min Typ. 7.5 0.4 0.2 0.85 0.8 1.5 2.5 3.0 15.5 8 160 Max Unit GHz pF pF pF dB dB dB dB dB dB mV
IP3
26
dBm
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Document Number 85022 Rev. 1.6, 08-Sep-08
BFQ67 / BFQ67R / BFQ67W
Vishay Semiconductors Common Emitter S-Parameters
Z0 = 50 , Tamb = 25 C, unless otherwise specified VCE/V IC/mA f/MHz LIN MAG 5 2 100 300 500 800 1000 1200 1500 1800 2000 2200 2500 2800 3000 5 5 100 300 500 800 1000 1200 1500 1800 2000 2200 2500 2800 3000 5 10 100 300 500 800 1000 1200 1500 1800 2000 2200 2500 2800 3000 5 15 100 0.894 0.749 0.610 0.486 0.445 0.419 0.402 0.403 0.411 0.423 0.445 0.464 0.490 0.760 0.522 0.390 0.311 0.292 0.282 0.287 0.298 0.313 0.328 0.353 0.379 0.400 0.594 0.346 0.264 0.230 0.224 0.225 0.235 0.251 0.270 0.287 0.310 0.342 0.362 0.477 S11 ANG deg -20.6 -56.2 -83.8 -116.2 -132.4 -147.3 -166.6 177.0 167.0 158.5 146.1 137.1 130.5 -32.1 -79.0 -108.5 -139.1 -153.5 -166.5 178.0 164.0 157.1 149.6 140.6 133.2 127.4 -46.3 -101.6 -130.9 -158.2 -169.5 179.8 166.8 156.9 150.2 144.1 136.4 131.0 125.6 -56.7 6.78 5.61 4.50 3.36 2.87 2.50 2.12 1.83 1.69 1.59 1.45 1.34 1.27 14.10 9.62 6.72 4.56 3.77 3.21 2.67 2.29 2.10 1.96 1.79 1.65 1.55 22.01 12.12 7.86 5.13 4.21 3.56 2.94 2.51 2.30 2.14 1.95 1.79 1.68 26.58 LIN MAG S21 ANG deg 163.0 136.2 117.7 98.8 90.2 81.9 71.7 62.8 58.0 53.0 45.8 39.1 34.7 154.1 121.5 104.7 89.9 83.1 76.7 68.3 60.9 56.6 52.5 46.4 39.4 35.4 144.4 110.8 97.1 85.1 79.5 73.9 66.8 59.9 56.0 52.1 46.2 39.9 35.9 138.3 0.027 0.066 0.086 0.102 0.109 0.115 0.126 0.142 0.156 0.173 0.202 0.232 0.255 0.024 0.052 0.067 0.088 0.103 0.119 0.143 0.169 0.189 0.209 0.239 0.267 0.286 0.021 0.043 0.060 0.088 0.107 0.126 0.154 0.184 0.206 0.226 0.256 0.284 0.302 0.019 LIN MAG S12 ANG deg 77.1 59.2 50.0 46.3 46.9 48.7 53.1 58.1 60.8 63.2 65.2 65.5 64.7 72.7 58.5 57.0 60.0 62.1 63.6 64.7 65.5 65.2 64.8 63.5 61.5 59.8 69.8 63.5 66.0 69.0 69.7 69.6 68.6 67.6 66.2 65.1 62.6 60.1 57.8 69.7 0.967 0.834 0.716 0.623 0.590 0.568 0.546 0.531 0.524 0.516 0.511 0.490 0.471 0.912 0.663 0.538 0.473 0.459 0.450 0.438 0.428 0.423 0.415 0.406 0.380 0.358 0.829 0.524 0.431 0.399 0.396 0.393 0.387 0.379 0.374 0.366 0.354 0.325 0.301 0.7681 LIN MAG S22 ANG deg -8.7 -20.8 -25.9 -28.6 -30.1 -31.8 -35.0 -38.8 -41.9 -45.1 -51.7 -59.1 -64.8 -15.2 -27.9 -28.1 -26.3 -26.4 -27.4 -30.4 -34.2 -37.1 -40.2 -46.8 -53.8 -58.9 -21.7 -29.9 -25.7 -21.9 -21.8 -23.3 -26.6 -30.7 -33.7 -36.9 -43.6 -50.5 -55.3 -25.3
Document Number 85022 Rev. 1.6, 08-Sep-08
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BFQ67 / BFQ67R / BFQ67W
Vishay Semiconductors
VCE/V IC/mA f/MHz LIN MAG 300 500 800 1000 1200 1500 1800 2000 2200 2500 2800 3000 5 20 100 300 500 800 1000 1200 1500 1800 2000 2200 2500 2800 3000 5 30 100 300 500 800 1000 1200 1500 1800 2000 2200 2500 2800 3000 8 2 100 0.276 0.221 0.208 0.206 0.208 0.221 0.237 0.257 0.280 0.303 0.329 0.357 0.397 0.240 0.205 0.199 0.195 0.202 0.219 0.235 0.252 0.274 0.300 0.326 0.357 0.301 0.219 0.201 0.198 0.201 0.204 0.222 0.242 0.263 0.279 0.308 0.336 0.365 0.900 S11 ANG deg -116.4 -144.4 -169.5 -177.8 172.5 162.5 154.0 147.5 142.4 135.4 130.0 124.8 -66.0 -128.2 -153.8 -175.5 176.6 168.2 159.0 151.5 145.7 140.0 134.2 129.2 124.8 -82.0 -143.6 -165.8 176.3 170.4 163.8 156.2 149.4 144.6 139.7 133.6 128.8 124.1 -19.9 13.06 8.25 5.34 4.35 3.68 3.03 2.58 2.37 2.21 2.01 1.85 1.73 29.45 13.50 8.43 5.43 4.42 3.73 3.08 2.62 2.40 2.24 2.03 1.87 1.76 32.38 13.79 8.52 5.46 4.43 3.75 3.09 2.62 2.40 2.24 2.03 1.86 1.75 6.84 LIN MAG S21 ANG deg 106.1 94.0 83.2 78.0 72.8 65.9 59.3 55.7 52.1 46.1 39.7 36.0 134.1 103.4 92.3 82.0 77.1 72.0 65.5 59.0 55.2 51.6 46.0 39.6 35.8 128.8 100.3 90.3 80.6 75.9 71.1 64.5 58.1 54.4 50.9 45.0 39.2 35.0 163.2 0.039 0.059 0.088 0.109 0.129 0.159 0.190 0.212 0.232 0.262 0.290 0.308 0.017 0.038 0.058 0.089 0.110 0.131 0.162 0.193 0.215 0.235 0.265 0.293 0.311 0.016 0.036 0.057 0.090 0.111 0.133 0.164 0.195 0.216 0.238 0.267 0.295 0.313 0.026 LIN MAG S12 ANG deg 67.8 70.9 72.5 72.3 71.6 69.9 68.2 66.7 65.2 62.4 59.5 57.1 69.8 71.1 73.5 74.3 73.8 72.5 70.5 68.6 66.8 65.3 62.4 59.4 57.0 71.9 74.7 76.5 76.1 75.2 73.5 71.3 69.2 67.3 65.6 62.4 59.4 56.8 76.9 0.4623 0.3912 0.3733 0.3734 0.3736 0.3686 0.3619 0.3561 0.3474 0.3343 0.3053 0.2807 0.722 0.427 0.370 0.360 0.362 0.363 0.359 0.352 0.346 0.338 0.325 0.295 0.270 0.662 0.393 0.352 0.350 0.354 0.356 0.353 0.346 0.340 0.332 0.318 0.288 0.264 0.967 LIN MAG S22 ANG deg -29.2 -23.1 -19.1 -19.4 -21.1 -24.7 -29.0 -32.1 -35.4 -42.2 -49.1 -53.7 -27.5 -28.1 -21.0 -17.3 -17.7 -19.7 -23.6 -28.0 -31.1 -34.5 -41.1 -48.3 -52.9 -29.4 -25.7 -18.3 -15.2 -16.0 -18.2 -22.3 -26.9 -30.2 -33.6 -40.7 -47.6 -52.1 -8.4
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Document Number 85022 Rev. 1.6, 08-Sep-08
BFQ67 / BFQ67R / BFQ67W
Vishay Semiconductors
VCE/V IC/mA f/MHz LIN MAG 300 500 800 1000 1200 1500 1800 2000 2200 2500 2800 3000 8 5 100 300 500 800 1000 1200 1500 1800 2000 2200 2500 2800 3000 8 10 100 300 500 800 1000 1200 1500 1800 2000 2200 2500 2800 3000 8 15 100 0.751 0.615 0.480 0.440 0.408 0.391 0.390 0.398 0.407 0.429 0.454 0.474 0.777 0.532 0.391 0.306 0.283 0.268 0.271 0.281 0.298 0.312 0.339 0.369 0.388 0.618 0.356 0.262 0.218 0.211 0.205 0.219 0.235 0.249 0.268 0.294 0.322 0.352 0.512 S11 ANG deg -54.9 -82.0 -113.9 -130.1 -145.1 -164.8 178.5 168.6 159.6 147.7 138.6 131.5 -30.5 -76.2 -104.5 -135.8 -149.1 -163.0 -180.0 166.6 158.8 151.8 142.4 134.7 128.9 -43.7 -96.4 -125.0 -153.5 -164.9 -175.7 170.4 158.9 152.1 145.5 138.8 132.3 126.8 -52.8 5.70 4.59 3.43 2.94 2.55 2.16 1.87 1.73 1.62 1.48 1.37 1.29 14.06 9.71 6.82 4.64 3.84 3.27 2.72 2.33 2.14 2.00 1.82 1.68 1.57 21.93 12.30 8.01 5.24 4.28 3.63 3.00 2.56 2.34 2.19 1.99 1.83 1.72 26.62 LIN MAG S21 ANG deg 136.6 118.3 99.5 90.8 82.7 72.4 63.5 58.4 54.0 46.7 39.9 35.2 154.7 122.4 105.5 90.5 83.7 77.3 69.1 61.5 57.3 53.2 46.8 40.1 35.8 145.3 111.7 97.8 85.6 80.1 74.6 67.4 60.5 56.8 52.8 46.9 40.4 36.3 139.4 0.063 0.083 0.098 0.105 0.112 0.123 0.138 0.153 0.169 0.198 0.226 0.249 0.023 0.050 0.065 0.086 0.101 0.116 0.139 0.165 0.184 0.204 0.232 0.260 0.278 0.020 0.042 0.059 0.086 0.104 0.123 0.150 0.180 0.200 0.221 0.250 0.276 0.294 0.019 LIN MAG S12 ANG deg 59.9 50.7 47.1 47.8 49.8 54.2 59.0 61.7 64.2 65.9 66.3 65.3 73.1 58.9 57.3 60.4 62.3 63.8 65.1 65.9 65.6 65.3 64.1 62.2 60.2 70.6 63.6 66.0 68.9 69.7 69.6 68.8 67.8 66.6 65.4 63.1 60.4 58.0 70.3 0.838 0.724 0.632 0.601 0.579 0.556 0.544 0.536 0.529 0.523 0.502 0.482 0.916 0.675 0.552 0.489 0.473 0.466 0.454 0.445 0.440 0.432 0.424 0.397 0.373 0.837 0.542 0.448 0.417 0.413 0.411 0.404 0.398 0.392 0.384 0.373 0.343 0.316 0.780 LIN MAG S22 ANG deg -20.1 -25.0 -27.6 -29.0 -30.8 -33.8 -37.6 -40.4 -43.5 -49.7 -56.8 -62.1 -14.5 -26.7 -27.2 -25.3 -25.5 -26.5 -29.4 -33.0 -35.7 -38.8 -45.0 -51.6 -56.0 -20.6 -28.7 -24.9 -21.1 -21.1 -22.5 -25.9 -29.7 -32.5 -35.6 -42.0 -48.4 -52.2 -24.0
Document Number 85022 Rev. 1.6, 08-Sep-08
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BFQ67 / BFQ67R / BFQ67W
Vishay Semiconductors
VCE/V IC/mA f/MHz LIN MAG 300 500 800 1000 1200 1500 1800 2000 2200 2500 2800 3000 8 20 100 300 500 800 1000 1200 1500 1800 2000 2200 2500 2800 3000 0.279 0.215 0.191 0.186 0.189 0.203 0.219 0.238 0.252 0.282 0.312 0.335 0.436 0.239 0.192 0.178 0.177 0.176 0.195 0.214 0.229 0.251 0.275 0.304 0.333 S11 ANG deg -109.2 -137.0 -164.4 -173.2 177.0 164.6 155.3 148.9 143.5 136.5 130.7 126.0 -60.6 -118.9 -147.0 -170.5 -179.4 172.3 161.7 153.4 148.2 142.5 135.6 130.5 125.8 13.28 8.43 5.46 4.44 3.76 3.10 2.65 2.42 2.26 2.05 1.88 1.77 29.61 13.78 8.62 5.55 4.51 3.82 3.15 2.69 2.45 2.28 2.08 1.91 1.79 LIN MAG S21 ANG deg 106.8 94.6 83.6 78.5 73.4 66.6 60.1 56.1 52.6 46.8 40.7 36.7 135.1 104.1 92.8 82.5 77.5 72.6 66.0 59.6 56.1 52.4 46.5 40.7 36.4 0.039 0.057 0.086 0.107 0.126 0.155 0.185 0.206 0.226 0.256 0.282 0.300 0.017 0.037 0.057 0.087 0.108 0.128 0.157 0.188 0.209 0.230 0.258 0.286 0.303 LIN MAG S12 ANG deg 67.4 70.3 72.1 72.1 71.5 69.8 68.4 66.9 65.5 62.9 60.2 57.8 69.8 70.4 72.9 73.8 73.4 72.4 70.6 68.8 67.2 65.6 62.8 59.9 57.6 0.480 0.408 0.391 0.391 0.392 0.386 0.380 0.374 0.367 0.355 0.325 0.302 0.735 0.444 0.387 0.378 0.380 0.382 0.378 0.371 0.366 0.358 0.345 0.316 0.292 LIN MAG S22 ANG deg -28.0 -22.1 -18.5 -18.9 -20.4 -24.0 -28.1 -31.0 -34.1 -40.7 -47.2 -51.4 -26.1 -26.9 -20.3 -16.7 -17.2 -19.2 -22.9 -27.2 -30.1 -33.4 -40.0 -46.5 -50.8
Typical Characteristics (Tamb = 25 C unless otherwise specified)
300
Ptot - Total Power Dissipation (mW)
10000 8000 6000 4000 2000 0 V CE = 8 V f = 500 MHz
250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Tamb - Ambient Temperature (C)
f T - Transition Frequency ( MHz )
0
12867
10
96 12159
20 30 40 I C - Collector Current ( mA )
50
Figure 1. Total Power Dissipation vs. Ambient Temperature
Figure 2. Transition Frequency vs. Collector Current
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Document Number 85022 Rev. 1.6, 08-Sep-08
BFQ67 / BFQ67R / BFQ67W
Vishay Semiconductors
Ccb - Collector Base Capacitance ( pF )
1.0 0.8 0.6 0.4 0.2 f = 1 MHz 0.0 0 4 8 12 16 20 V CB - Collector Base Voltage ( V )
12884
Figure 3. Collector Base Capacitance vs. Collector Base Voltage
5 F - Noise Figure ( dB ) 4 3 2 1 0 0
12869
f = 2 GHz
f = 800 MHz V CE = 8 V ZS = 50 5 10 15 20 I C - Collector Current ( mA ) 25
Figure 4. Noise Figure vs. Collector Current
Document Number 85022 Rev. 1.6, 08-Sep-08
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BFQ67 / BFQ67R / BFQ67W
Vishay Semiconductors
VCE = 8 V, IC = 15 mA, Z0 = 50 S11
j
S21
90 120 60
j0.5
j2
150
j0.2 3.0 GHz 2.0 0 0.2 1.0 0.3 -j0.2 0.1 -j0.5
12998
30 0.1 0.3 1.0
j5
1
2
5
i
180
3.0 GHz
20
40
0
-j5
-150
-j2
-30
-j
-120
13000
-60 -90
Figure 5. Input Reflection Coefficient
Figure 7. Forward Transmission Coefficient
S12
90 120 60
S22
j j0.5 150 2.0 1.0 180 0.1 0.2 0.4 0 0 0.2 0.5 1 3.0 GHz -150 -30 -j0.2 0.8 5 1.0 -j5 3.0 GHz 30 j0.2 j5 j2
-120
12999
-60 -90
13501
-j0.5 -j
-j2
Figure 6. Reverse Transmission Coefficient
Figure 8. Output Reflection Coefficient
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Document Number 85022 Rev. 1.6, 08-Sep-08
BFQ67 / BFQ67R / BFQ67W
Vishay Semiconductors Package Dimensions in mm (Inches)
1.15 (0.045)
0.175 (0.007) 0.098 (0.005) 0.1 (0.004) max. 0.4 (0.016) 0.4 (0.016) 2.6 (0.102) 2.35 (0.092)
0.95 (0.037)
ISO Method E
3.1 (0.122) 2.8 (0.110) 0.4 (0.016) C
1.43 (0.056) 1.20 (0.047)
Mounting Pad Layout
0.52 (0.020)
0.9 (0.035)
2.0 (0.079)
E 0.95 (0.037)
B 0.95 (0.037) 0.95 (0.037) 0.95 (0.037)
9511346
Package Dimensions in mm (Inches)
1.15 (0.045)
0.175 (0.007) 0.098 (0.005) 0.1 (0.004) max. 0.4 (0.016) 0.4 (0.016) 2.6 (0.102) 2.35 (0.092)
0.95 (0.037)
ISO Method E
3.1 (0.122) 2.8 (0.110) 0.4 (0.016) C
1.43 (0.056) 1.20 (0.047)
Mounting Pad Layout
0.52 (0.020)
0.9 (0.035)
2.0 (0.079)
B 0.95 (0.037)
E 0.95 (0.037) 0.95 (0.037) 0.95 (0.037)
9511346
Document Number 85022 Rev. 1.6, 08-Sep-08
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BFQ67 / BFQ67R / BFQ67W
Vishay Semiconductors Package Dimensions in mm (Inches)
96 12236
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Document Number 85022 Rev. 1.6, 08-Sep-08
BFQ67 / BFQ67R / BFQ67W
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85022 Rev. 1.6, 08-Sep-08
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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